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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION With TO-3 package High voltage ,high speed Built-in damper diode APPLICATIONS For color TV horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER INC Collector-base voltage Emitter-base voltage E SEM ANG H OND IC CONDITIONS TOR UC VALUE 1500 6 5 6 UNIT V V A A W ae ae Open emitter Open collector Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -45~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3658 SYMBOL TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 500 mA hFE DC current gain IC=1A ; VCE=5V 8 VECF Diode forward voltage IF=6A 2.0 V tf Fall time IC=5A ; IB1=1A;IB2=-2.5A;LB=0 CHA IN E SEM NG OND IC TOR UC 0.5 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3658 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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